AFT09MS007N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

Overview

Features

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    941
  • P1dB (Typ) (dBm)
    38.6
  • P1dB (Typ) (W)
    7.3
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1-Tone @ 7.3
  • Power Gain (Typ) (dB) @ f (MHz)
    870.0@15.2
  • Efficiency (Typ) (%)
    71
  • Thermal Resistance (Spec) (°C/W)
    1.1
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

870 MHz Narrowband

(7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
87015.271.07.3

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
136-1740.2514.669.07.2
350-4700.2015.660.97.3
450-5200.2215.456.07.5
760-8600.2315.148.17.5

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870CW> 65:1
at all Phase
Angles
0.4
(3 dB
Overdrive)
10.8No
Device
Degradation