AFT09MS007N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

Overview

PLD-1.5W Image

PLD-1.5W Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 941
Supply Voltage (Typ) (V) 7.5
P1dB (Typ) (dBm) 38.6
P1dB (Typ) (W) 7.3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 7.3 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 15.2 @ 870
Efficiency (Typ) (%) 71
Thermal Resistance (Spec) 1.1
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

870 MHz Narrowband

(7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
87015.271.07.3

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
136-1740.2514.669.07.2
350-4700.2015.660.97.3
450-5200.2215.456.07.5
760-8600.2315.148.17.5

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870CW> 65:1
at all Phase
Angles
0.4
(3 dB
Overdrive)
10.8No
Device
Degradation