AFT09MS031N: 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Overview

TO-270-2, TO-270G-2 Gull Package Image

TO-270-2, TO-270G-2 Gull Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 941
Supply Voltage (Typ) (V) 13.6, 12.5
P1dB (Typ) (dBm) 44.9
P1dB (Typ) (W) 31
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 31 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 17.2 @ 870
Efficiency (Typ) (%) 71
Thermal Resistance (Spec) 0.63
Matching Unmatched
Class AB
Die Technology LDMOS

Reference Circuits

RF Performance Tables

764-941 MHz Narrowband

13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
76418.074.132
87017.271.031
94115.768.131

764-870 MHz Broadband

13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
76015.762.044
82015.763.037
87015.561.036

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870(1)CW>65:1
at all Phase
Angles
1.2
(3 dB
Overdrive)
17No
Device
Degradation
870(2)2.0
(3 dB
Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz broadband reference circuit.