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Low capacitance RF Schottky diodes

Selection guide
Schottky diodes (low capacitance RF)
1PS10SB82 - Schottky barrier diode
1PS66SB17 - 4 V, 30 mA low C_d Schottky barrier diode
1PS66SB82 - 15 V, 30 mA low Cd Schottky barrier diodes
1PS70SB82 - Schottky barrier (double) diodes
1PS70SB84 - Schottky barrier (double) diodes
1PS70SB85 - Schottky barrier (double) diodes
1PS70SB86 - Schottky barrier (double) diodes
1PS76SB17 - 4 V, 30 mA low C_d Schottky barrier diode
1PS79SB17 - 4 V, 30 mA low C_d Schottky barrier diode
1PS88SB82 - 15 V, 30 mA low Cd Schottky barrier diodes
BAT17 - Schottky barrier diode
PMBD353 - Schottky barrier double diode
PMBD354 - Schottky barrier double diode

Exceedingly low capacitance (< 1 pF)

Low capacitance (< 1 pF) Schottky diodes are well suited to all high frequency applications. They are used specifically for the gain control stages in the RF part of a mobile phone. Some devices have a capacitance 94% lower than an industry standard BAT54, or less than one third of existing low capacitance diodes such as the BAS40, achieved with no trade off in breakdown voltage specification.

Key benefits

  • (Very) low diode capacitance
  • (Very) low forward voltage
  • Single and triple-isolated diode
  • (Ultra / very) small package

Key features

  • Low diode capacitance(< 1 pF)
  • Low forward voltage
  • Ultra-small plastic SMD package (SOD882)
  • Single, double and triple configurations available
  • Ultra-high switching speed

Key applications

  • Digital applications:
    - ultra high-speed switching
    - clamping circuits
  • RF applications:
    - diode ring mixer
    - RF detector
    - RF voltage doubler