NXP Semiconductors


Select site:

English

Cellular basestation

Parametric Search
Cellular basestation
1800-2000 MHz transistors
2000-2200 MHz transistors
800-1000 MHz transistors

Latest products

BLF3G21-6

UHF power LDMOS transistor

Datasheet (96Kb)

Latest application notes

AN10229 1 (138Kb)

As a leading supplier of RF power products, we offer complete line-ups for all the main cellular basestation technologies: GSM/EDGE, TDMA, CDMA, and W-CDMA/UMTS. Our groundbreaking new LDMOS process technology, available in high-volume production, breaks the 30% efficiency barrier, thereby reducing power consumption and cooling costs.



The LDMOS technology has superior gain performance, ultra-low thermal resistance, and high linearity near compression. In addition, our plastic air-cavity packages are less costly than traditional ceramic packages yet maintain the same high performance.


Our portfolio includes finals and drivers in the 1-GHz, 2-GHz, and 2.2-GHz ranges. For Doherty applications, we have a Doherty reference design that uses the BLF6G22-130.


To support future growth of the cellular infrastructure, we are also investing in Gallium Nitride (GaN) technology.

Related documents

Support

To access our support resources, please go to our support page.