LDMOS for high-performance RF power applications

Gen7 LDMOS
Optimized for Doherty
LDMOS advantages
NXP's added value

NXP's seventh-generation (Gen7) LDMOS delivers record performance up to 3.8 GHz and offers 25% lower output capacitance. It enables wideband output matching and makes it easier to design high-performance Doherty applications.

Gen7 LDMOS

The seventh-generation of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology enables solutions with the highest possible efficiency. Compared to the previous generation, Gen7 increased power density by 20%, improves power efficiency by 2%, and reduces thermal resistance (Rth) by more than 25%.

The gate length is 0.3 µm, and the technology is processed in an advanced 8-inch CMOS fab, for a further reduction down to 0.14 µm.

Optimized for Doherty

Doherty has emerged as the amplifier architecture of choice for new basestation transmitters, helping wireless network operators increase efficiency and reduce operating costs. Gen7 is optimized for Doherty applications and enables Doherty amplifier with higher power, higher efficiency, less memory effects, and better pre-distortion capabilities.

LDMOS advantages

Technical

Excellent efficiency	Reduces power consumption and cooling costs
Excellent linearity	Minimizes signal pre-correction requirements
Optimized, ultra-low thermal resistance	Reduces amplifier size and cooling requirements, and improves reliability
Excellent peak-power capability	Enables high 3G data rates with minimal data errors
High power density	Reduces number of transistor packages
Very low inductance, feedback capacitance, and series gate-resistance	Enables LDMOS transistors with a 7-dB improvement in gain over bipolar devices
Direct source grounding	Improves power gain and eliminated the need for (toxic) BeO or A/N insulating materials
High power gain at GHz frequencies	Reduces the number of stages and delivers simpler, more cost-effective designs (using low-cost/low-power driver transistors)

Operational

Excellent ruggedness	Eliminates suffering from thermal runaway, due to a negative drain-current temperature coefficient
Ability to withstand higher load mismatch (VSWR) than Bipolar	Raises reliability in the field
Excellent RF stability	A built-in isolating shield between data and drain reduces feedback capacitance
Extremely good reliability	Superior Mean Time To Failure (MTTF) ratings

NXP's added value

Our basestation offering builds on world-leading innovation and manufacturing capabilities, providing access to a broad range of technologies that very few suppliers can combine:

LDMOS roadmap uses 0.14-µm manufacturing capabilities (also for MMICs)
High-performance LDMOS transistors available in standard and LORTH ceramic, plastic air-cavity and over-molded plastic packages
MMIC technology in plastic packages
Chip-on-carrier integration (FlexBase™)
Extensive Doherty IP and expertise in transistor and circuit design
Program for wide-bandgap materials