BLF6G21-10G
Power LDMOS transistor
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0.8 - 1.0 GHz transistors
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for basestations, covering all cellular technologies (GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
Key benefits
- Highest efficiency
- Best ruggedness
- Highest power, single ended devices
- Advanced 2-way Doherty amplifier designs
- Industry’s first 3.8 GHz Doherty
Key applications
- Cellular baseststions – GSM / EDGE, TDMA, (TD-S)CDMA, W-CDMA / UMTS)
- WiMAX basestations
Descriptive summary
The line-ups use sixth-generation LDMOS for enhanced RF performance plus unparalleled linearity and power gain. LDMOS also offers today's highest levels of system efficiency, requiring less energy to power the network infrastructure, so network operators can deliver next-generation cellular services and connectivity to consumers for less operational expenditure. Our portfolio includes line-ups in the 1 GHz, 2 GHz, 2.2 GHz, 2.7 GHz, and 3.8 GHz ranges.
Design support and tools
To support RF system engineers to design-in and integrate our solutions in the shortest time possible, we can offer various design and simulation information such as layout files, BIC large signal models, loadpull and S-parameters data.