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Microwave (LDMOS)
Industry leading LDMOS technology combined with leading-edge packaging solutions
Combine the power density of bipolar with the advantages of LDMOS technology for L- and S-band Radar design! Industry leading LDMOS technology, combined with leading-edge packaging solutions enables transistors and pallets that deliver best-in-class performance and reliability.
Key benefits
- High gain
- Better efficiency
- Highest reliability
- Improved pulse droop and insertion phase droop
- Reduces component count and helps simplify L- / S-band radar design
Key features
- Non-toxic packaging & ROHS compliance
- Fully qualified for TCAS (traffic collision avoidance systems)
- Better ruggedness – overdrive without risk up to 5 dB
Descriptive summary
NXP’s microwave portfolio covers L-band, S-band, and avionics applications, and meets the very high demands of today's most advanced equipment. New high performance designs in L- and S-band radar applications are moving away from bipolar technologies using toxic beryllium oxide (BeO). We combine the latest LDMOS technology with leading-edge packaging solutions, creating transistors and pallets that deliver superior quality, performance, and reliability.
Design support and tools
To support RF system engineers to design-in and integrate our solutions in the shortest time possible, we can offer various design and simulation information such as layout files, BIC large signal models, loadpull and S-parameters data.