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Low capacitance RF Schottky diodes

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Low capacitance RF Schottky diodes
1PS76SB17 - 4V; 30mA; single; SOD323 (SC-76)
1PS79SB17 - 4V; 30mA; single; SOD523 (SC-79)
1PS88SB82 - 15V; 30mA; triple isolated; SOT363 (SC-88)
1PS10SB82 - 15V; 30mA; single; SOD882
1PS66SB17 - 4V; 30mA; triple isolated; SOT666
1PS66SB82 - 15V; 30mA; triple isolated; SOT666
1PS70SB82 series - 15V; 30mA; single, dual; SOT323 (SC-70)
BAT17 - 4V; 30mA; single; SOT23
PMBD353 - 4V; 30mA; dual series; SOT23
PMBD354 - Schottky barrier double diode

Latest products

1PS66SB17; 1PS76SB17; 1PS79SB17

4 V, 30 mA low C_d Schottky barrier diode

Datasheet (50Kb)

Latest application notes

AN10117 1 (963Kb)

With their exceedingly low capacitance (< 1 pF), these diode families are very well suited to all high frequency applications, in particular communications devices such as mobile phones where designers use them specifically for the gain control stages in the RF part of a phone. Some devices have a capacitance 94% lower than an industry standard BAT54, or less than one third of existing low capacitance diodes such as the BAS40 -all achieved with no trade off in breakdown voltage specification.



Key features

  • Low diode capacitance(< 1 pF)
  • Low forward voltage
  • Ultra-small plastic SMD package (SOD882)
  • Single, double and triple configurations available
  • Ultra-high switching speed

Key applications

  • Gain control
  • UHF mixers
  • Modulators/demodulators
  • Phase detectors
  • RF ID and RF tag applications
  • High speed switching