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RF PIN diodes
Operating up to 3 GHz with high-voltage handling capabilities, NXP's PIN diodes are ideal for a wide range of mobile communications and RF applications. Their low loss and low distortion levels improve battery life and quality in mobile phones and cordless phones.
Together with outstanding RF performance, the diodes simplify design-in because of their extremely low forward resistance, diode capacitance and series inductance. These inherent qualities are largely due to a state-of-the-art planar diffusion process. Supplied in a range of highly compact package options - including SOD523 and the leadless, environmentally-friendly SOD882 (MCD) - significant board space savings can be made, helping designers create smaller, lighter end-products.
Features
- Operate up to 3 GHz
- High isolation, low distortion, low insertion loss
- Low forward resistance (Rd) and diode capacitance (Cd)
- Very low series inductance
- Ultra-small package options
- Sample kits available for evaluation
Applications
- Antenna switching for cordless phones, Bluetooth™, WLAN and telemetry modules
- RF attenuators for car radios and base stations
- Band switch for TV tuners
- Signal switching in satellite accessories e.g. multiswitch boxes, LNBs
- Transmit-receive switches in mobile communications
- General RF applications
Bluetooth is a trademark owned by Bluetooth SIG Inc. and is used by NXP Semiconductors under license.