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Industry leading LDMOS technology combined with leading-edge packaging solutions

NXP offers designers high efficiency avionics, L- and S-band LDMOS power amplifiers that match the performance of older bipolar process technologies, while delivering better reliability, ruggedness, gain and efficiency.

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New and updated products

BLS7G2730L-200P

LDMOS S-band radar power transistor

BLS7G2730LS-200P

LDMOS S-band radar power transistor



Featured product

BLS6G2735L(S)-30 - 30 W single-ended ceramic LDMOS transistor for S-band radar applications

Datasheet (pdf)

The BLS6G2735L(S)-30 is a multifunctional driver transistor that fits into power amplifiers across the full S-band radar frequency range from 2700 to 3500 MHz. Whether the application calls for high performance in a narrow band or full band coverage, the BLS6G2735L(S)-30 can be configured to do the job required.



Key features and benefits

  • High gain & efficiency impulsed application
  • Excellent ruggedness
  • Zero pulse droop (LDMOS)
  • Drivers and finals for complete line-up
  • Very-low thermal resistance design for unrivalled reliability and performance

Key applications

  • L-band radar
  • S-band radar
  • Avionics – TCAS, JTIDS, Mode-S

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Line card

Mounting and soldering

Selection guide

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