BLL6H0514-25

LDMOS driver transistor


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25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (0.5 GHz to 1.4 GHz)
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

Applications

  • Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range5001400MHz
PL(1dB)nominal output power at 1 dB gain compression25W
Test signal: Pulsed RF
PLoutput powerδ = 0.1; tp = 300 µs25W
Gppower gainVDS = 50 V; PL = 25 W19dB
ηDdrain efficiencyVDS = 50 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 50 mA; PL = 25 W50%
trrise timeVDS = 50 V; PL = 25 W8ns
tffall timeVDS = 50 V; PL = 25 W6ns
Pdroop(pulse)pulse droop powerPL = 25 W0.05dB
RLininput return lossVDS = 50 V; IDq = 50 mA; PL = 25 W-10dB

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLL6H0514-25BLL6H0514-25,1129340 634 48112Volume productionSOT467C
(SOT467C) 		Blister packStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT467C (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLL6H0514-25BLL6H0514-25,112BLL6H0514-25Always Pb-freeNANA
Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfLDMOS driver transistor (v.4.0)2010-03-30
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
BrochurepdfHigh performance aerospace and defense solutions (v.1.2)2010-12-15
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typepdfHigh Power RF LDMOS Transistors for Avionics Applications (v.1.0)2009-01-13
Other typezipPCB Design BLL6H0514-25 (Data sheet) (v.1.1)2009-05-18
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLL6H0514-25 ADS Model (v.1.0)2009-11-27
Simulation modelzipRF Power Model Library for MicroWave Office (v.2.1)2012-05-22
Simulation modelpdfRF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)2012-05-22

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLL6H0514-259340 634 48112BLL6H0514-25,112NADIGI-KEY CORPORATION285/24/2012Buy online 
   NANEWARK/ELEMENT14125/24/2012Buy online 
   EUFARNELL125/24/2012Buy online 
   ASIAELEMENT14 APAC125/24/2012Buy online 
   NAFUTURE ELECTRONICS25/23/2012Buy online 
   EUFUTURE ELECTRONICS UK25/23/2012Buy online 
   ASIAFUTURE ELECTRONICS- ASIA25/23/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 

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