BLF7G20LS-200

Power LDMOS transistor


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200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz

Features and benefits

  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Excellent ruggedness
  • Integrated ESD protection
  • High efficiency
  • Designed for broadband operation (1805 MHz to 1990 MHz)
  • Low Rth providing excellent thermal stability
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
  • Lower output capacitance for improved performance in Doherty applications

Applications

  • RF power amplifiers for W-CDMA base stations and multicarrier applications
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
PL(AV)average output power55W
Gppower gainVDS = 28 V; PL(AV) = 55 W1718dB
RLininput return lossVDS = 28 V; IDq = 1620 mA; PL(AV) = 55 W-10dB
ηDdrain efficiencyVDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1620 mA; PL(AV) = 55 W3033%
ACPRadjacent channel power ratioPL(AV) = 55 W; VDS = 28 V; IDq = 1620 mA; 1805 MHz ≤ f ≤ 1880 MHz-29dBc
frangefrequency range18051990MHz
PL(1dB)nominal output power at 1 dB gain compression200W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF7G20LS-200BLF7G20LS-200,1189340 645 84118Volume productionSOT502B
(SOT502B) 		Reel Pack, SMD, 13"Standard Marking
BLF7G20LS-200BLF7G20LS-200,1129340 645 84112Volume productionSOT502B
(SOT502B) 		Blister packStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT502B (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF7G20LS-200BLF7G20LS-200,118BLF7G20LS-200Always Pb-freeNANA
BLF7G20LS-200BLF7G20LS-200,112BLF7G20LS-200Always Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.4.0)2011-07-22
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
Application notepdfBLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier (v.1.0)2010-07-16
Application notepdf1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 (v.1.0)2011-01-04
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF7G20L(S)-200 (AN10921) (v.2.1)2011-02-22
Other typezipPCB Design BLF7G20L(S)-200 (AN10944) (v.2.1)2011-03-23
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF7G20-200 ADS Model (v.1.0)2010-07-27

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF7G20LS-2009340 645 84118BLF7G20LS-200,118      not available
BLF7G20LS-2009340 645 84112BLF7G20LS-200,112       

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