Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
|PL(1dB)||nominal output power at 1 dB gain compression||1400||W|
|Test signal: Pulsed RF|
|Gp||power gain||VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W ||22||23.5||dB|
|RLin||input return loss||VDS = 50 V; IDq = 40 mA; PL = 1400 W ||-17||-13||dB|
|ηD||drain efficiency||VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W ||65||69||%|
|PL||output power||VDS = 50 V; f = 225 MHz ||1400||W|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with NXP our network of global and regional distributors is available and equipped to support you with NXP samples. As a NXP customer you also have the option to order samples via our sales organisation.