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Transistor wideband NPN up to 30 GHz
Our latest SiGeC microwave NPN transistors bring you high switching frequencies (fT >100 GHz), high gain and very low noise in the easy-to-use SOT343F.
We offer many families of RF wideband transistors with a host of package, process and specification options. The range is now up to its 7th generation, delivering operating frequencies from 100 MHz to 25 GHz.
SiGeC microwave NPN transistor BFU725F
The BFU725F is one of the newest solutions to join our offering. Its ultra-low noise figure makes it ideal for your sensitive RF, cell phone receivers, while a high cut-off frequency means it handles microwave applications in the 10 GHz to 30 GHz range comfortably.
A much more cost-effective solution than GaAs pHEMT devices, the BFU725F eliminates the need for a biasing IC or negative biasing voltage.
Key benefits
- SiGeC process delivers high switching frequency from a silicon-based device
- Cost-effective alternative to GaAs devices
- RoHS compliant
Key features
- Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)
- High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz)
- High switching frequency (fT >100 GHz / fMAX >150 GHz)
- Plastic surface-mount package SOT343F
Key applications
- GPS systems
- DECT phones
- Low noise amplifier (LNA) for microwave communications systems
- 2nd-stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs)
- Satellite radio
- WLAN and CDMA
- Low-noise microwave
Related applications
NXP satellite LNB integrated system solutionRelated links
SiGeC microwave NPN transistor BFU725FNXP fully integrated down converter (PLL synthesizer/ mixer/amplifier) TFF1004HN for satellite LNB
RF manual – 10th edition