NXP small-signal N- and P-channel low RDSon MOSFETs

May 27, 2011

Our advanced MOSFET solutions deliver the flexibility and performance that today's market demands. NXP offers a wide range of general-purpose MOSFET solutions, available in a variety of package options, from the largest SOT223 to the world's smallest MOSFET in an SOT883 package - the ultimate in miniaturization. New leadless package solutions with extra heat sink like SOT1118 open a new dimension of improvements in higher efficiency and higher current capability at less board space.

Key features

  • Voltage range from 12V up to 300V
  • Low threshold voltages down to < 0.7 V
  • Handles high peak currents and voltages
  • Fast switching
  • New low RDSon P-channel types down to 27 mΩ
  • New low RDSon N-channel types down to 15 mΩ

Product benefits

New Low RDSon P- and N-channel types:
  • Low threshold voltage supports operation in battery-powered applications (mobile phones, PDAs, etc.)
  • Very low on-state resistance minimizes switching power losses
  • Smallest solution (SOT883) saves space in tight designs
     
New P-channel MOSFET and Schottky combination in SOT1118:
  • Smallest 2 x 2 mm leadless dual P-channel MOSFET in the market with only 0.65 mm package height
  • Best-in-class thermal performance due to extra heatsink
  • Increased energy efficiency with lowest VF of 365 mV and 520 mV @ 1 A respectively

Key applications

  • Load switches
  • Gate drivers in DC-DC converters
  • Low-voltage DC motor control
  • BI-directional level shifters
  • Battery protection in Li-ion powered applications
  • Buck conversion for high-end graphics cards

Download datasheet

Low RDSon P-channel MOSFETs: PMV48XP Datasheet
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Low RDSon N-channel MOSFETs: PMV28UN Datasheet
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