
Pure RF power gets your message out
Manufacturers of broadcast equipment are under increasing pressure to deliver richer content to our screens, putting greater strain on transmitters with costs often spiraling out of control. Today's high-performance TV transmitters constitute serious investments, and broadcasters rightly seek to utilize the maximum power available so they can build fewer systems with the least amount of costly PA transistors and board space.
NXP continues to lead the market with products based on their Gen6HV LDMOS technology: a great blend of high gain, power and efficiency while raising the bar for ruggedness and maintaining a level of cost-effectiveness the market needs. With volume manufacturing second to none in the industry, customers benefit from greater peace of mind through the excellent consistency in product performance.
The relentless drive for efficiency improvements now sees the widespread adoption of Doherty topologies in the digital TV market, a move that is easier said than done. The principle challenge being how best to apply the narrow-band high efficiency benefits of Doherty to a market that requires a solution that covers some 400MHz of bandwidth. For this challenge to be met the market needs suppliers who not only provide leading edge products but can also offer expert application support to match. This is exactly how NXP fits in.
Key features
- Highest power with NXP’s proven Gen6HV LDMOS technology
- Best-in-class efficiency in all configurations
- Best RF performance over entire UHF bandwidth
- Excellent ruggedness with no compromise to RF performance
- Most cost effective solutions available
Applications
- Digital TV/radio
- Analog TV
- FM radio
Key downloads
- NXP's RF Manual 16th edition (pdf) (2012-06-08)
- RF power UHF/DVB-T broadcasting at its best (pdf) (2011-11-29)
- The most powerful LDMOS broadcast transistor delivering 125 W output power (pdf) (2011-05-27)
- NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital Broadcasting (pdf) (2011-05-27)
- LDMOS RF power transistor delivering 1000 W of CW output power (pdf) (2011-05-27)
- Using the BLF574 in the 88-108 MHz FM band (pdf) (2010-01-26)
- Using the BLF578 in the 88 MHz to 108 MHz FM band (pdf) (2009-10-13)
- Dependency of BLF578 gate bias voltage on temperature (pdf) (2009-12-18)
- High Voltage RF LDMOS Technology for Broadcast Applications (pdf) (2009-01-13)
- Broadband QUBiC4 MMICs for all 400-2700 MHz applications; NXP medium-power MMICs BGA7xxx for broadband applications (pdf) (2010-06-01)
- 174 MHz to 230 MHz DVB-T power amplifier with the BLF881 (pdf) (2010-11-18)
- LDMOS technology for RF power amplifiers (pdf) (2012-11-08)
- Enabling the Mobile Experience (pdf) (2013-02-05)
- RF Manual 17th edition: Application and design manual for High Performance RF products June 2013 (pdf) (2013-05-28)

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