HPRF TechZone


High Performance RF TechZone


Pure RF power gets your message out

Manufacturers of broadcast equipment are under increasing pressure to deliver richer content to our screens, putting greater strain on transmitters with costs often spiraling out of control. Today's high-performance TV transmitters constitute serious investments, and broadcasters rightly seek to utilize the maximum power available so they can build fewer systems with the least amount of costly PA transistors and board space.

NXP continues to lead the market with products based on their Gen6HV LDMOS technology: a great blend of high gain, power and efficiency while raising the bar for ruggedness and maintaining a level of cost-effectiveness the market needs. With volume manufacturing second to none in the industry, customers benefit from greater peace of mind through the excellent consistency in product performance.

The relentless drive for efficiency improvements now sees the widespread adoption of Doherty topologies in the digital TV market, a move that is easier said than done. The principle challenge being how best to apply the narrow-band high efficiency benefits of Doherty to a market that requires a solution that covers some 400MHz of bandwidth. For this challenge to be met the market needs suppliers who not only provide leading edge products but can also offer expert application support to match. This is exactly how NXP fits in.

Key features

  •     Highest power with NXP’s proven Gen6HV LDMOS technology
  •     Best-in-class efficiency in all configurations
  •     Best RF performance over entire UHF bandwidth
  •     Excellent ruggedness with no compromise to RF performance
  •     Most cost effective solutions available

Applications

  • Digital TV/radio
  • Analog TV
  • FM radio

Videos

  • Doherty for high-efficiency broadcast applications...

    youtube video

    Doherty for high-efficiency broadcast applications (EuMW 2012)

  • Extremely rugged RF Power Transistors...

    youtube video

    Extremely rugged RF Power Transistors



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