High Performance RF TechZone
News
- NXP IQ Modulators Feature Highest Dynamic Range with DC-Independent DAC Interfacing - October 31, 2012
- NXP Develops Industry’s First Full-Band UHF Doherty Architecture - October 30, 2012
- NXP Boosts Small Cell Wireless Base Stations With High-Performance RF - October 29, 2012
Uncompromised ruggedness powers ISM
The growing popularity of the ISM (Industrial, Scientific, and Medical) band is enabling a whole host of new RF applications. Ruggedness, or the ability to withstand a mismatch condition without failure, is one of the most important reliability parameters in this area. To understand why, you just need to imagine the variable loading conditions that RF powered plasma applications need to cope with.
NXP has been leading the way in ruggedness since we introduced our first LDMOS transistors nearly a decade ago and some of our 6th generation LDMOS transistors have been proven to be virtually indestructible. Basically all of our transistors are designed to withstand a mismatch of at least 10:1 (VSWR). For the demanding load of ISM application this is often not enough. To tackle even the harshest RF environment, we developed an XR -"extremely rugged" technology node. Devices based on this technology have proven practically unbreakable and can even take the place for those made in VDMOS technology.
So no matter what application you are designing, NXP LDMOS amplifiers will ensure you can power it.
Key features
- Power levels up to 1200W per single device
- Excellent, field-proven ruggedness
- able to drive variable load impedances
Applications
- RF plasma generation
- RF heating
- RF drying
- RF sensing
Key downloads
- NXP's RF Manual 16th edition (pdf) (2012-06-08)
- Using the BLF574 in the 88-108 MHz FM band (pdf) (2010-01-26)
- Using the BLF578 in the 88 MHz to 108 MHz FM band (pdf) (2009-10-13)
- Dependency of BLF578 gate bias voltage on temperature (pdf) (2009-12-18)
- High Voltage RF LDMOS Technology for Broadcast Applications (pdf) (2009-01-13)
- Broadband QUBiC4 MMICs for all 400-2700 MHz applications; NXP medium-power MMICs BGA7xxx for broadband applications (pdf) (2010-06-01)
- BLF578 demo for 352 MHz 1kW CW power (pdf) (2011-03-24)
- LDMOS RF power transistor delivering 1000 W of CW output power (pdf) (2011-05-27)
- Enabling the Mobile Experience (pdf) (2013-02-05)
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