The most efficient signal chain
Wireless infrastructure is going through significant changes. The success of data-centric smartphones and cellular data modems with "flat rate plans" is overwhelming the capability of today's networks. To boost network bandwidth, faster air interface technologies like LTE are required. In addition smaller distributed base stations, remote radio heads and multi antenna arrays will help meet increasing metropolitan service level expectations.
All this requires ever greater levels of efficiency to not only meet the overall increase in power consumption, but to allow base station designs to be shrunk to fit into more compact designs. NXP continues to work with major OEMs to drive system efficiencies ever higher. By understanding the complete signal chain, from bits to antenna and from antenna back to bits, NXP is helping deliver the improvements needed.
With the explosion of cellular data usage and the limited number of sites available for new macro base stations, operators have to find new ways of offering high data rates and excellent quality of service. One of the options is to complement the macro network with small cells, known as pico-cells (1 to 2 W average) and micro cells (5 to 20 W average). NXP offers and develops several types of solutions to the small cell PAs designer, optimized for performance, integration or cost.
Key features
- Complete portfolio covering the entire signal chain
- Strong position in RF power transistors for base station power amplifiers
- more than 300W per device @ 2.1GHZ
- best in class power efficiency
- Extensive portfolio of RF small signal components based on Si, SiGe and SiGe:C BiCMOS
- Highly competitive data converter portfolio including JESD204A-compliant devices
Key applications
- Radio unit
- Point-to-point
- Wireless repeater
- Tower mounted amplifier
- RF front-end
Wireless Connectivity
- GPS
- WLAN
- eMetering
Key downloads
- NXP's RF Manual 16th edition (pdf) (2012-06-08)
- RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz (pdf) (2011-12-01)
- RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications (pdf) (2011-12-01)
- Doherty RF performance using the BLF6G20-230PRN (pdf) (2010-02-02)
- Doherty RF performance analysis using the BLF7G22LS-130 (pdf) (2010-02-25)
- BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier (pdf) (2010-07-16)
- A perfect match up to 20 GHz; SiGeC microwave NPN transistor BFU725F (pdf) (2006-10-01)
- Broadband QUBiC4 MMICs for all 400-2700 MHz applications; NXP medium-power MMICs BGA7xxx for broadband applications (pdf) (2010-06-01)
- 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 (pdf) (2011-01-04)
- 1.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN (pdf) (2011-03-14)
- 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P (pdf) (2010-08-16)
- 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P (pdf) (2010-12-10)
- LDMOS technology for RF power amplifiers (pdf) (2012-11-08)
- Enabling the Mobile Experience (pdf) (2013-02-05)
- RF Manual 17th edition: Application and design manual for High Performance RF products June 2013 (pdf) (2013-05-28)
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