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NXP at IMS2013, a valuable interactive show for the RF community

At the International Microwave Symposium, the biggest microwave convention in the world, was held in Seattle, WA, June 2 - 7, we showcased our latest High Performance RF innovations.

NXP at IMS2013 Show highlights

  • Solid State RF Energy opportunities with a live Solid State Cooking demo.  Check out the new  “RF Energy The Revolution” video
  • The industry’s first ultra wideband Doherty amplifier for UHF with a live set-up
  • A full line-up of the latest NXP solutions for up link and down link sat com
  • Our first Gen8+ device, the BLC8G27LS-160AV, the world’s smallest and most cost-effective solution for 15 W and20 W power amplifiers for active antenna outdoor base stations (2.6GHz).
  • We officially unveiled the Engineers’ Corner an online engineer-to-engineer RF small signal community for collaboration,technical support and sharing of ideas. Check out this video
  • And much more … Check out all of NXPs IMS2013 videos.


We hope to see you next year at IMS2014 in Tampa Bay, Florida.

NXP at the IMS Conference

Date & Time Session Title Summary Authors Room
Sunday June 2, 8:00-12:00 - Workshop: VCO design VCO performance is critical for numerous RFIC applications including Receivers, Transmitters, Imagers, Radar systems and many more. This educational workshop will refresh the fundamentals of VCO design including an overview of common phase noise theories. State-of-the-art RFIC VCO designs in integrated CMOS and Bipolar/BiCMOS technologies will be covered in detail, not only including a focus on mobile operation, but also on wideband ultra low noise base station requirements. Further contributions will focus on the design for mm-wave operation and ultra low power. Additionally the topic of accurately measuring phase noise will complete the coverage of the VCO topic. M. Tiebout, Infineon Technologies Austria AG and D.M.W. Leenaerts, NXP Semiconductors, Netherlands WSL
Monday June 3, 9:00 - 9:20 RMO1D-4 A 12ps True-Time-Delay Phase Shifter with 6.6% delay variation at 20-40GHz A fully integrated 2-channel Ka-band True Time Delay (TTD) phase shifter with 12ps continuous changing delay time has been realized in a 0.25mm SiGe:C BiCMOS technology. A delay variation cancellation technique is proposed, resulting in less than 0.8ps delay variation over a 20-40GHz frequency span, meanwhile maintaining a constant input impedance. In the high (low) power mode, the measured input 1dB compression point and input IP3 are +9.7dBm (+3.6dBm) and +18dBm (+13dBm) at 30GHz with an averaged power consumption per channel of 145mW (33mW) for the same TTD performance. The size of the core phase shifter is less than 0.1mm2. Q. Ma1, D.M.W. Leenaerts1, R. Mahmoudi2, 1NXP Semiconductors, Eindhoven, Netherlands 2Technical University Eindhoven, Netherlands 613/614
Monday June 3, 1:30 – 3:10 RM03B RF LNAs and RF Rectifiers   Chair: F. Henkel, IMST GmbH,
Co-chair: D.M.W. Leenaerts, NXP Semiconductors
615/617
Monday June 3, 2:10 - 2:30 RMO3C-3 A Dual-band LO Generation System Using a 40GHz VCO with a Phase Noise of -106.8dBc/Hz at 1-MHz This paper demonstrates a novel dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-µm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%. Y. Chen1, Y. Pei1, D.M.W. Leenaerts1, 1NXP Semiconductors, Eindhoven, Netherlands 611/612
Tuesday June 4, 12:00 – 1:20 WSCC-6A Panel session: Universities are from Venus, Industry from Mars Panelists:
- Lawrence Larson (Dean, Professor, Brown University)
- Ali Hajimiri (Professor, Caltech)
- Sorin Voinigescu (Professor, University of Toronto)
- David Su (Vice President Engineering, Qualcomm Atheros)
- Curtis Ling (Co-Founder and Chief Technical Officer, Maxlinear)
- Domine Leenaerts (Senior Principal, NXP Semiconductors)
Panel Organizers and Moderators: Hossein Hashemi (University of Southern California)
Ali Afshahi (Broadcom)
WSCC-6A
Wednesday June 5, 3:20-3:30 WE3A-6 A Package-Integrated 50W High-Efficiency RF CMOS-GaN Class-E Power Amplifier A 50W CMOS-GaN class-E power amplifier in a package is presented. The GaN HEMT power bar switch is driven by a high-speed, high voltage 65nm CMOS driver chip. The proposed switch-mode power amplifier (SMPA) demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz. To the authors knowledge this is the world’s first package-integrated CMOS-GaN power amplifier that could enable digital transmitter architectures based on true SMPA building blocks. M. P. van der Heijden1, M. Acar1, S. Maroldt2, 1NXP Semiconductors, Eindhoven, Netherlands, 2Fraunhofer Institute for Applied Solid State Physics , Freiburg, Germany 608/609
Wednesday June 5, 10:10-10:30, WE2A-1 A 70W Package-Integrated Class-E Chireix Outphasing RF Power Amplifier A class-E Chireix outphasing RF high-power amplifier integrated inside a transistor package is described. The optimum class-E loading conditions and the Chireix compensation elements are provided to the active devices by an ultra-low loss bondwire-based transformer power combiner. At 2.3 GHz, the prototype generates up to 70.6 W peak power and demonstrates 53.5% and 43.5% average drain- and total-efficiency for a 9.6 dB PAR W-CDMA signal with -49/-56 dBc ACLR1/2 after memory-less DPD. D. A. Calvillo-Cortes1, M. P. van der Heijden2, L. C. de Vreede1, 1Delft University of Technology, Delft, Netherlands, 2NXP Semiconductors, Eindhoven, Netherlands 608/609

NXP at IMS MicroApps

Date & Time Session Title Summary Authors Room
 

          Thursday June 6, 10:50 – 11:10

-l

- NXP introduces an innovative MMIC family As a leader in RF Power products for base station applications, NXP is expanding its portfolio with an innovative LDMOS MMIC product family. For the first time, the MMICs were designed using a modular approach. It consists in developing independent MMIC building blocks at different power levels, and then combined them together to make the final products. The interest of this approach lies in the full flexibility on the combination of the blocks to allow symmetric or (as an industry first) asymmetric MMICs in a two-pipe package. Using asymmetric MMICs is very powerful to boost the efficiency of the complete base station power amplifier: they can be used in class AB operation to drive an asymmetric Doherty final, or they can be combined in a Doherty configuration to be used as a driver in macro base stations or as a final for small cells. X. Moronval, NXP Semiconductors, Netherlands MicroApps Theatre

More information about the International Microwave Symposium you can find here: www.ims2013.org

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