High Performance RF TechZone

• NXP Delivers Industry’s First Ultra-Wideband Doherty Amplifiers - May 21, 2013
  

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Only NXP delivers a portfolio of high performance RF technology that can differentiate your product – no matter where in the RF world you play. That’s why customers trust us with mission critical designs.

Processes that lead the way
Whether it’s LDMOS and GaN for high power RF applications or SiGe and BiCMOS for your small signal needs, we’ve got you covered. This broad portfolio of far-reaching technologies gives you the freedom to design with confidence.

For example, NXP’s recent developments in GaN transistors deliver high frequency combined with high power and efficiency in RF amplifiers – ideal for basestations, broadcast and radar. While our LDMOS high-power RF amplifiers and power transistors define ruggedness, efficiency and gain at a lower cost for wireless basestations, ISM, broadcast, and aerospace and defense applications.

For your small signal needs our SiGe technology delivers GaAs-like performance in high frequency, power and efficiency with the consistent, ruggedness and affordability of silicon—all in a small footprint.

Packaging innovation
Beyond processes, we also pay special attention to packaging. Complementing our proven ceramic portfolio, we are developing a complete line of overmolded plastic (OMP) packages including RF power transistors and MMICs with peak powers up to 200 W.

• SiGe:C QUBIC4X
• LDMOS
• GaN
• Packaging