MMRF1022HSR5 :Part Detail

General Information

Part NumberMMRF1022HSR5
DescriptionAirfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Product LineM821H36T
PTIRGDE
Material TypeTested Packaged Device
Life Cycle Description (code)PRODUCT STABLE GROWTH/MATURITY
StatusActive
Application/Qualification Tier10-YEARS APPLICATION LIFE

Package Information

Package Type and Termination CountAir Cavity 7
Package Description and Mechanical DrawingNI-1230S-4L2L
Device Weight(g)8.60420
Package Length (nominal)(mm)32.260
Package Width (nominal)(mm)10.160
Package Thickness (nominal)(mm)4.190
Tape & ReelYes

Environmental and Compliance Information

Pb-Free
RoHS Compliant
Halogen Free Yes
Material Composition Declaration (MCD)Download MCD Report Download MCD Report      Download MCD Report
RoHS Certificate of Analysis (CoA)Download RoHS CoA Report
2nd Level Interconnecte4
Peak Package Body Temperature (PPT)(°C)260
Maximum Time at Peak Temperature (s)40
Number of Reflow Cycles3
REACH SVHCNXP REACH Statement

Manufacturing Information

Micron Size(μm)6

Ordering Information

Minimum Package Quantity (MPQ)50
MPQ ContainerREEL
Exempt from Minimum Delivery ValueYes
Preferred Order Quantity (POQ)50
POQ ContainerBOX
Export Control Classification Number (US)EAR99
Harmonized Tariff (US) Disclaimer8541.29.0075
CCATS Document-
ENC Status-
Other Trade Compliance Documents-
Budgetary Price excluding tax(US$)
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Operating Characteristics

Class AB
C
Die Technology LDMOS
Efficiency (Typ) (%) 51.8
Frequency (Min) (MHz) 2110
Frequency Band (Min-Max) (MHz) 2110 to 2170
Frequency Max (Max) (MHz) 2170
Matching I/O
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 63 @ AVG
P1dB (Typ) (dBm) 54.8
P1dB (Typ) (W) 301
P3dB (Typ) (W) 400
Power Gain (Typ) (dB) @ f (MHz) 16.2 @ 2140
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Test Signal W-CDMA
Thermal Resistance (Spec) 0.33