MMRF1023HSR5 :Part Detail

General Information

Part NumberMMRF1023HSR5
DescriptionAirfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V
Product LineM823H30T
PTIRGDE
Material TypeTested Packaged Device
Life Cycle Description (code)PRODUCT RAPID GROWTH
StatusActive
Application/Qualification Tier10-YEARS APPLICATION LIFE

Package Information

Package Type and Termination CountAir Cavity 7
Package Description and Mechanical DrawingNI-1230S-4L2L
Device Weight(g)8.60420
Package Length (nominal)(mm)32.260
Package Width (nominal)(mm)10.160
Package Thickness (nominal)(mm)4.190
Tape & ReelYes

Environmental and Compliance Information

Pb-Free
RoHS Compliant
Halogen Free Yes
Material Composition Declaration (MCD)Download MCD Report Download MCD Report      Download MCD Report
RoHS Certificate of Analysis (CoA)Download RoHS CoA Report
2nd Level Interconnecte4
Peak Package Body Temperature (PPT)(°C)260
Maximum Time at Peak Temperature (s)40
Number of Reflow Cycles3
REACH SVHCNXP REACH Statement

Manufacturing Information

Micron Size(μm)6

Ordering Information

Minimum Package Quantity (MPQ)50
MPQ ContainerREEL
Exempt from Minimum Delivery ValueYes
Preferred Order Quantity (POQ)50
POQ ContainerBOX
Leadtime (weeks)10
Export Control Classification Number (US)EAR99
Harmonized Tariff (US) Disclaimer8541.29.0075
CCATS Document-
ENC Status-
Other Trade Compliance Documents-
Budgetary Price excluding tax(US$)
Change Currency
-
Order

Operating Characteristics

Class AB
C
Die Technology LDMOS
Efficiency (Typ) (%) 46.7
Frequency (Min) (MHz) 2300
Frequency Band (Min-Max) (MHz) 2300 to 2400
Frequency Max (Max) (MHz) 2400
Matching I/O
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 66 @ AVG
P1dB (Typ) (dBm) 54.4
P1dB (Typ) (W) 275
P3dB (Typ) (W) 410
Power Gain (Typ) (dB) @ f (MHz) 14.9 @ 2300
Sample Exception Availability N
Supply Voltage (Typ) (V) 28
Test Signal W-CDMA
Thermal Resistance (Spec) 0.25
  Suggested Drivers