MMRF1312HR5 :Part Detail

General Information

Part NumberMMRF1312HR5
DescriptionRF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Product LineM81211KH
PTIRGDA
Material TypeTested Packaged Device
Life Cycle Description (code)PRODUCT STABLE GROWTH/MATURITY
StatusActive
Application/Qualification Tier10-YEARS APPLICATION LIFE

Package Information

Package Type and Termination CountAir Cavity 5
Package Description and Mechanical DrawingNI-1230
Device Weight(g)13.19260
Package Length (nominal)(mm)41.150
Package Width (nominal)(mm)10.160
Package Thickness (nominal)(mm)4.190
Tape & ReelYes

Manufacturing Information

Micron Size(μm)6

Ordering Information

Minimum Package Quantity (MPQ)50
MPQ ContainerREEL
Exempt from Minimum Delivery ValueYes
Preferred Order Quantity (POQ)50
POQ ContainerREEL
Export Control Classification Number (US)EAR99
Harmonized Tariff (US) Disclaimer8541.29.0075
CCATS Document-
ENC Status-
Other Trade Compliance Documents-
Budgetary Price excluding tax(US$)
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Operating Characteristics

Class AB
Die Technology LDMOS
Efficiency (Typ) (%) 54
Frequency (Min) (MHz) 900
Frequency Band (Min-Max) (MHz) 900 to 1215
Frequency Max (Max) (MHz) 1215
Matching I/O
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1200 @ Peak
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
P3dB (Typ) (W) 1200
Power Gain (Typ) (dB) @ f (MHz) 17.3 @ 960
Sample Exception Availability N
Supply Voltage (Typ) (V) 52
Test Signal Pulse
Thermal Resistance (Spec) 0.017