MMRF1312HR5 :Part Detail

General Information

Part NumberMMRF1312HR5
DescriptionRF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Product LineM81211KH
Material TypeTested Packaged Device
Life Cycle Description (code)PRODUCT RAPID GROWTH
Application/Qualification Tier10-YEARS APPLICATION LIFE

Package Information

Package Type and Termination CountAir Cavity 5
Package Description and Mechanical DrawingNI-1230
Device Weight(g)13.19260
Package Length (nominal)(mm)41.150
Package Width (nominal)(mm)10.160
Package Thickness (nominal)(mm)4.190
Tape & ReelYes

Environmental and Compliance Information

RoHS Compliant
Halogen Free Yes
Material Composition Declaration (MCD)Download MCD Report Download MCD Report      Download MCD Report
RoHS Certificate of Analysis (CoA)Download RoHS CoA Report
2nd Level Interconnecte4
Peak Package Body Temperature (PPT)(°C)260
Maximum Time at Peak Temperature (s)40
Number of Reflow Cycles3

Manufacturing Information

Micron Size(μm)6

Ordering Information

Minimum Package Quantity (MPQ)50
MPQ ContainerREEL
Exempt from Minimum Delivery ValueYes
Preferred Order Quantity (POQ)50
POQ ContainerREEL
Leadtime (weeks)10
Export Control Classification Number (US)EAR99
Harmonized Tariff (US) Disclaimer8541.29.0075
CCATS Document-
ENC Status-
Other Trade Compliance Documents-
Budgetary Price excluding tax(US$)
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Operating Characteristics

Class AB
Die Technology LDMOS
Efficiency (Typ) (%) 54
Frequency (Min) (MHz) 900
Frequency Band (Min-Max) (MHz) 900 to 1215
Frequency Max (Max) (MHz) 1215
Matching I/O
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1200 @ Peak
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
P3dB (Typ) (W) 1200
Power Gain (Typ) (dB) @ f (MHz) 17.3 @ 960
Sample Exception Availability N
Supply Voltage (Typ) (V) 52
Test Signal Pulse
Thermal Resistance (Spec) 0.017
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