AFV141KHR5 :Part Detail

General Information

Part NumberAFV141KHR5
DescriptionBROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V
Product Line8141KH
PTIRGDL
Material TypeTested Packaged Device
Life Cycle Description (code)PRODUCT RAPID GROWTH
StatusActive
Application/Qualification Tier10-YEARS APPLICATION LIFE

Package Information

Package Type and Termination CountAir Cavity 5
Package Description and Mechanical DrawingNI-1230
Device Weight(g)13.19260
Package Length (nominal)(mm)41.150
Package Width (nominal)(mm)10.160
Package Thickness (nominal)(mm)4.190
Tape & ReelYes

Environmental and Compliance Information

Pb-Free
RoHS Compliant
Halogen Free Yes
Material Composition Declaration (MCD)Download MCD Report Download MCD Report      Download MCD Report
RoHS Certificate of Analysis (CoA)Download RoHS CoA Report
2nd Level Interconnecte4
Peak Package Body Temperature (PPT)(°C)260
Maximum Time at Peak Temperature (s)40
Number of Reflow Cycles3
REACH SVHCNXP REACH Statement

Manufacturing Information

Micron Size(μm)6

Ordering Information

Minimum Package Quantity (MPQ)50
MPQ ContainerREEL
Exempt from Minimum Delivery ValueYes
Preferred Order Quantity (POQ)50
POQ ContainerBOX
Export Control Classification Number (US)EAR99
Harmonized Tariff (US) Disclaimer8541.29.0075
CCATS Document-
ENC Status-
Other Trade Compliance Documents-
Budgetary Price excluding tax(US$)
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Operating Characteristics

Class AB
Die Technology LDMOS
Efficiency (Typ) (%) 52.1
Frequency (Min) (MHz) 1200
Frequency Band (Min-Max) (MHz) 1200 to 1400
Frequency Max (Max) (MHz) 1400
Matching Unmatched
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1000 @ Peak
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
P3dB (Typ) (W) 1100
Power Gain (Typ) (dB) @ f (MHz) 17.7 @ 1400
Sample Exception Availability Y
Supply Voltage (Typ) (V) 50
Test Signal Pulse
Thermal Resistance (Spec) 0.018