965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
MMRF1007H 接收通知
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RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
NI-1230H-4S, NI-1230S-4S Package Image
产品详情
特征
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA,
Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 20 dB
- Drain Efficiency: 56%
- Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push-Pull Operation
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
部件编号包含： MMRF1007HS.