1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors
MMRF1306H 接收通知
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These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz.
产品详情
RF Performance Tables
Typical Performance
VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
| Pulse (100 µsec, 20% Duty Cycle) |
1250 Peak | 230 | 24.0 | 74.0 |
| CW | 1250 CW | 230 | 22.9 | 74.6 |
Application Circuits — Typical Performance
| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 27 | CW | 1300 | 27 | 81 |
| 40 | CW | 1300 | 26 | 85 |
| 81.36 | CW | 1250 | 27 | 84 |
| 87.5-108 | CW | 1100 | 24 | 80 |
| 144-148 | CW | 1250 | 26 | 78 |
| 170-230 | DVBT | 225 | 25 | 30 |
| 352 | Pulse (200 µsec, 20% Duty Cycle) | 1250 | 21.5 | 66 |
| 352 | CW | 1150 | 20.5 | 68 |
| 500 | CW | 1000 | 18 | 58 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pout (W) |
Test Voltage |
Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) |
>65:1 at all Phase Angles |
1500 Peak (3 dB Overdrive) |
50 | No Device Degradation |