NXP is excited to announce the A3G26D055N, the first of our leading-edge product lines for
mid-power discrete Gallium Nitride (GaN) solutions. The Airfast GaN A3G26D055N is a 55 W peak GaN
discrete transistor, housed in a compact DFN 7 x 6.5 mm over-molded plastic package. This device
has an unmatched output to fill multiple frequency bands and exceeds over 50% efficiency and over
13 dB of gain with operation at 48 V.
Versatile GaN Solution for Various Markets
The A3G26D055N is versatile in that its applications range from 100-2800 MHz and can be used
across various markets. These markets include cellular infrastructure, RF Energy and wideband
Within our RF 5G cellular infrastructure high-power portfolio, this sub-6 GHz A3G26D055N device
operates in the 2.6 GHz cellular band, at 39 dBm and at 8 W average power. It can be used for 5G
massive MIMO radio units (64T64R) as well as for under 1 GHz cellular bands as a driver for macro
radio units such as 4T4R antenna systems.
Solid state RF energy is a reliable heat and power source. Our A3G26D055N device is versatile for
use in the 2.45 GHz ISM band as an RF energy driver for cooking, industrial heating and welding.
In addition, it can be used as a low-power final-stage in the lineup at 25 W CW for medical and
This new A3G26D055N device is also well suited for wideband communications that typically operate
under demanding conditions. Examples include wideband tactical communications within the 100-2800
MHz range, as well as a 25 W CW wideband low-power final-stage or as a driver for the MMRF5014H or
MMRF5018H products within our aerospace and defense portfolio.
Want More Information? Access Our Website.
The A3G26D055NT4 is available now for ordering and sampling through our Exclusive Sample Program.
Please visit our website to access the
product summary page
An extensive set of reference circuits is available to enable faster time to market. These compact
designs cover power and frequencies to support a wide range of applications.