RDGD3100F3PH5EVB: 3-Phase Reference Design for Fuji M653 IGBTs featuring GD3100

RDGD3100F3PH5EVB Power Gate Drive board reference design features the GD3100 advanced IGBT/SiC gate driver for high voltage 3-phase EV motor control

IGBT temperature sensing

Per phase IGBT temperature monitoring via TSENSEA

High voltage Isolation

LV and HV isolation along GD3100 galvanic isolation

Desaturation short-circuit detection

Short circuit protection

Galvanic Isolation between LV and HV domains

Monitor DC bus voltage via AMUXIN circuitry

Phase current sensing connection circuitry

Monitor phase current per phase for feedback control

Motor resolver and excitation connection circuitry

Monitor motor position sensing for Field Oriented Control

Overview

IGBT/SiC Power Gate Drive board Reference Design
IGBT/SiC Power Gate Drive board Reference Design bottom view
RDGD3100F3PH5EVB Complete Solution
RDGD3100F3PH5EVB Complete Solution
IGBT/SiC Power Gate Drive board Reference Design

IGBT/SiC Power Gate Drive board Reference Design  

IGBT/SiC Power Gate Drive board Reference Design bottom view

IGBT/SiC Power Gate Drive board Reference Design bottom view  

RDGD3100F3PH5EVB Complete Solution

RDGD3100F3PH5EVB Complete Solution  

RDGD3100F3PH5EVB Complete Solution

RDGD3100F3PH5EVB Complete Solution  

Inverter Platform live demonstration

Inverter Platform live demonstration  

Specifications

RDGD3100F3PH5EVB Block Diagram

RDGD3100F3PH5EVB Block DiagramGate DriverGate DriverGate DriverGate DriverGate DriverGate DriverGate DriverGate DriverMicrocontroller MCUMicrocontroller MCUSystem Basic Chip (SBC)System Basic Chip (SBC)CAN TransceiverCAN Transceiver
  • GD3100 :  Advanced single-channel gate driver for Insulated Gate Bipolar Transistors (IGBTs/SiC)
  • FS6500 :  Grade 1 and Grade 0 safety power system basis chip with CAN flexible data transceiver
  • TJA1042 :  High-speed CAN transceiver with standby mode

Technical and Functional Specifications

MC33GD3100

  • Advanced single channel gate driver for IGBT© and SiC MOSFETs. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

Features

  • SPI interface for safety monitoring, programmability and flexibility
  • Low propagation delay and minimal PWM distortion
  • Integrated Galvanic signal isolation (up to 8 kV)
  • Integrated gate drive power stage capable of 15 A peak source and sink
  • Fully programmable Active Miller Clamp
  • Compatible with negative gate supply
  • Compatible with current sense and temperature sense IGBTs
  • Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping
  • CMTI > 100 V/ns
  • Compatible with 200 V to 1700 V IGBT/SiC, power range > 125 kW
  • Operating temperature range −40 °C to 125 °C
  • External Creepage distance (CPG): > 7.8 mm
  • Operating frequency > 40 kHz
  • 5.0 V and 3.3 V tolerant MCU interface available

SPI interface

  • Safety monitoring and programming control features
  • PCIe connector providing external I/O connections (including GDIC control and SPI, motor current and application feedback, and power supply control)
    • PCIe cable harness included
  • Additional SPI test port for GDIC debug
  • Connector for resolver/motor position sense
  • Connector for motor phase current sense

ASIL D ISO 26262 compliant

  • GD3100 is compliant with ISO 26262 ASIL C/D functional safety requirements

AEC-Q100

  • Automotive Grade Qualified

Safety Features

  • Certified to ASIL D ISO 26262 functional safety requirements for full diagnostics
  • Current, DESAT, and temperature sense inputs and ADC reporting for IGBT/SiC monitoring
  • Fast short-circuit protection, over-current protection, temperature warning and shutdown
  • Interrupt pin for fast response to faults
  • Built-in self-check of all analog and digital circuits
  • Continuous watchdog of die-to-die communications
  • Dead-time enforcement
  • Over and under-voltage supervision of all power supplies on both low and high voltage sides
  • Fail-safe state management pins on both low and high voltage sides
  • VGE real time cycle-by-cycle monitoring

Not Included
(order separately):

  • MPC5777C-DEVB MCU: Based on the 32-bit Power Architecture® MPC5777C ultra-reliable MCU together with the FS65 System Basis Chip and the TJA1100 and TJA1145T/FD Ethernet and CAN FD PHY transceivers, the MPC5777C-DEVB facilitates hardware and software development, offering system performance, safety, and security.
  • DC link capacitor
  • IGBT module
  • Water Cooling Jacket

Buy

  • RDGD3100F3PH5EVB   Active

  • 3-Phase Reference Design for Fuji M653 IGBTs featuring GD3100

  • Kit contains:

    • RDGD3100F3PH5EVB three-phase Power Gate Drive inverter board
    • Connection cable (S32SDEV-CON18)
    • 1 @ US
    • $800.00
      • Buy Direct
      • Distributor
RDGD3100F3PH5EVB-Image
1579109330588723448640

Design Resources

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