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/Title (MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived)
/Subject (Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.)
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2005-07-19T20:39:43Z
2005-07-21T09:52:30-07:00
Acrobat Distiller 5.0 (Windows)
Freescale Semiconductor
BroadVision, Inc.
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
cdma, multicarrier, ldmos, linear, base station, is-95, tdma, single-carrier, rf power
2005-07-19T20:39:43Z
2005-07-21T09:52:30-07:00
Freescale Semiconductor
2005-07-21T09:52:30-07:00
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
Freescale Semiconductor
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
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