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/Title (MRF5S21150R3, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived)
/Keywords (w-cdma, multicarrier, cdma, rf power, internally matched, 2.2 ghz, tdma, single-carrier, linear, base station, ldmos, broadband, mmds)
/Subject (Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.)
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2005-03-08T16:15:23Z
2005-03-08T10:12:03-07:00
Acrobat Distiller 5.0.5 (Windows)
Freescale Semiconductor
BroadVision, Inc.
MRF5S21150R3, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
w-cdma, multicarrier, cdma, rf power, internally matched, 2.2 ghz, tdma, single-carrier, linear, base station, ldmos, broadband, mmds
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
2005-03-08T16:15:23Z
2005-03-08T10:12:03-07:00
Freescale Semiconductor
2005-03-08T10:12:03-07:00
MRF5S21150R3, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Freescale Semiconductor
MRF5S21150R3, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
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