SOT1735-1: FM4F


Overview

TO-272 WB-4
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
FM4F 23 x 8 x 2.59 4
Manufacture Code Reference Codes Issue Date
98ASA10575D 2017-06-11
Part Description Quick access
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
2170MHZ 10W TO272WB4N
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
1880MHZ 60W TO272WB4N
GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 869-960 MHz, 80 W, 26 V
1990MHZ 60W 28V TO272WB4
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
2170MHZ 23W TO272WB4N
100W 900MHZ 26V TO272WB4N
HV5 450MHZ TO272WB4N
100W 900MHZ 26V TO272WB4N
1990MHZ 28V TO272WB4N