SOT1736-1: FM4F


Overview

TO-270 WB-4
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
FM4F 17.53 x 9.02 x 2.59 5
Manufacture Code Reference Codes Issue Date
98ASA10577D 2017-06-11
Part Description Quick access
Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V
2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 22 W Avg., 28 V
2170MHZ 14W TO270WB4N
HV5 2170MHZ 10W TO270WB4
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
100W 900MHZ 26V TO270WB4N
CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
HV6E 45W GSM TO270WB4
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
HV5 900MHZ 80W TO270WB4N
2170MHZ 23W TO270WB4N
GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V
Broadband RF Power LDMOS Transistor 10-600 MHz, 300 W CW, 50 V
WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
HV6E 45W GSM TO270WB4
2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V
1990MHZ 60W 28V TO270WB4
100W 900MHZ 26V TO270WB4N
WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
1990MHZ 28V TO270WB4N
WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
HV5 450MHZ TO270WB4N
Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V