SOT1792-1: CFM2F


Overview

CFM2F, ceramic, flange mount flat package; 2 terminals; 9.78 mm x 34.04 mm x 3.75 mm body
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
CFM2F flange mount double CFM 9.78 x 34.04 x 3.75 2 ceramic
Manufacture Code Reference Codes Issue Date
98ASB15607 2017-06-11
Part Description Quick access
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 28 W Avg., 28 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1510 MHz, 23 W Avg., 28 V
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 34 W Avg., 28 V
Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 22 W Avg., 28 V