SOT1811-1: PLD4L


Overview

PLD4L, plastic, RF over-molded package designation; 4 terminals; 5.85 mm x 6.61 mm x 1.74 mm body
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
PLD4L surface mount double 5.85 x 6.61 x 1.74 4 plastic
Manufacture Code Reference Codes Issue Date
98ASB15740C PDFP-D2(JEDEC) 2017-06-11
Part Description Quick access
Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V
GaAs pHEMT Power FET, 500-5000 MHz, 9 W, 12 V
Lateral N-Channel RF Power MOSFET, 1-2000 MHz, 4 W, 28 V
GaAs pHEMT Power FET, 3.5 GHz, 4.5 W , 12 V
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V