There are three models dedicated to MOS transistors. MOS Model 9 was developed in the early nineties, and is intended for use in both digital and analogue circuit design. It is a threshold-voltage based model, providing an accurate description of the electrical characteristics in all relevant regions of transistor operation, such as the subthreshold current, the substrate current and the output conductance.

    MOS Model 11 is a much more advanced compact MOS model from NXP. It is not only intended for use in digital and analogue design, but in RF circuit design as well. MOS Model 11 is a surface-potential based model, providing an excellent description of electrical distortion characteristics in all relevant regions of transistor operation. In addition, MOS Model 11 includes all the important physical phenomena important in modern and future CMOS technologies, such as gate leakage, gate-induced drain leakage, poly depletion, quantum-mechanical effects and bias-dependent overlap capacitances.

    The PSP model is the latest compact MOSFET model, which has been jointly developed by Philips Research and the Pennsylvania State University. It is a surface-potential based MOS Model, containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, etc.), to model present-day and upcoming deep-submicron CMOS technologies. Unlike previous NXP MOS models, the source/drain junction model, c.q. the JUNCAP2 model, is an integrated part of the PSP model.

    The following MOSFET models are available: