An equivalent electrical circuit of a high-voltage MOS device can be described by an enhancement-type MOSFET, like MOS Model 9, MOS Model 11 or MOS Model PSP in series with one or more accumulation/depletion-type MOSFETs, like MOS Model 31 or MOS Model 40.
For the description of bipolar transistors in special processes with lateral drift regions Mextram or Modella can be used in conjunction with either MOS Model 31 or MOS Model 40.
MOS Model 20 improved the convergence behaviour during simulation, by having the voltage at the transition from the channel region to the drift region calculated inside the model itself. The model has been discontinued after SiMKit 3.8 as newer models have been built within NXP. See More >
MOS Model 31 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications. The model describes the electrical behaviour of a junction-isolated accumulation/depletion-type MOSFET. The model is used as the drain extension of high-voltage MOS devices, like the Lateral Double-diffused MOS (LDMOS), the Vertical Double-diffused MOS (VDMOS), and the Extended MOS transistors. See More >
MOS Model 40 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications processed in Silicon-on-Insulator (SOI). The model describes the electrical behaviour of an accumulation/depletion-type MOSFET in SOI.See More >