Model 11

Software Details

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Features

  • Mobility reduction
  • Bias-dependent series resistance
  • Velocity saturation
  • Conductance effects (CLM, DIBL, etc.)
  • Gate leakage current
  • Gate-induced drain leakage
  • Gate depletion
  • Quantum-mechanical effects
  • Bias-dependent overlap capacitances

Documentation

Quick reference to our documentation types.

1 documents

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