MRF18060AL: 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs ARCHIVED

Overview

The MRF18060ALR3 and MRF18060ALSR3 are designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM 1805 – 1880 MHz.

Archived content is no longer updated and is made available for historical reference only.

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Features

Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain: 13 dB @ 60 Watts

Efficiency — 45% @ 60 Watts
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MoreLess

Features

Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain: 13 dB @ 60 Watts

Efficiency — 45% @ 60 Watts
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Data Sheets

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

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