The ZBT® RAM is a 16M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround®. The ZBT® RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM64Z936 (organized as 512K words by 36 bits) and the MCM64ZA18 (organized as 1M words by 18 bits) are fabricated in NXP’s high performance silicon gate CMOS technology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in communication applications. Synchronous design allows precise cycle control with the use of an external positive–edge–triggered clock (CK). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.