MRF21030LR3: 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET ARCHIVED

Overview

The MRF21030LR3 is designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

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Features

Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
   Output Power — 3.5 Watts
   Power Gain — 14 dB
   Efficiency — 15%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.

MoreLess

Features

Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
   Output Power — 3.5 Watts
   Power Gain — 14 dB
   Efficiency — 15%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.

Data Sheets

NI-400 Package Image

NI-400 Package Image

NI-400 Package Image

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