865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

MRF8S9232N
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz18.436.56.1–37.8
940 MHz18.336.26.1–37.9
960 MHz18.136.36.1–37.8
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 330 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 230 Watts CW

800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz18.936.16.2–38.7
880 MHz18.936.36.2–38.6
895 MHz18.736.26.1–38.8

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