MHVIC910HNR2: 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit ARCHIVED

Overview

The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Our High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.

Archived content is no longer updated and is made available for historical reference only.

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Features

Typical GSM Performance: V_DD = 26 Volts, I_DQ = 150 mA, Pout = 10 Watts, Full Frequency Band (921–960 MHz)

Power Gain: 39 dB (Typ)

Power Added Efficiency: 48% (Typ)
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power
Stable into a 10:1 VSWR. All Spurs Below –60 dBc @ 0 to 40 dBm CW Pout.
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated ESD Protection
Usable Frequency Range — 921 to 960 MHz
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

MoreLess

Features

Typical GSM Performance: V_DD = 26 Volts, I_DQ = 150 mA, Pout = 10 Watts, Full Frequency Band (921–960 MHz)

Power Gain: 39 dB (Typ)

Power Added Efficiency: 48% (Typ)
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power
Stable into a 10:1 VSWR. All Spurs Below –60 dBc @ 0 to 40 dBm CW Pout.
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated ESD Protection
Usable Frequency Range — 921 to 960 MHz
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Data Sheets