Peripherals and Logic
Signal Chain
Analog Switches
- NX3DV221GM
- NX3DV221TK
- NX3DV2567
- NX3DV3899
- NX3DV42
- NX3DV642GU
- NX3L1G3157
- NX3L1G384
- NX3L1G53
- NX3L1G66
- NX3L1T3157
- NX3L1T384
- NX3L1T5157
- NX3L1T53
- NX3L2267
- NX3L2467
- NX3L2G384
- NX3L2G66
- NX3L2T66
- NX3L4051
- NX3L4053
- NX3L4357
- NX3L4684
- NX3V1G384
- NX3V1G66
- NX5DV330
- NX5DV715HF
- NX5L2750CGU
NX3DV221TK

NX3DV221TK: High-speed USB 2.0 switch with enable

Overview

The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps).

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Features

Wide supply voltage range from 2.3 V to 3.6 V
Switch voltage accepts signals up to 5.5 V
1.8 V control logic at V_CC = 3.6 V
Low-power mode when OE is HIGH (2 µA maximum)
6 Ω (maximum) ON resistance
0.1 Ω (typical) ON resistance mismatch between channels
6 pF (typical) ON-state capacitance
High bandwidth (1.0 GHz typical)
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
ESD protection:
- HBM JESD22-A114F Class 3A exceeds 8000 V
- CDM JESD22-C101E exceeds 1000 V
- HBM exceeds 12000 V for I/O to GND protection
Specified from -40 °C to +85 °C

Target Applications

Routes signals for USB 1.0, 1.1 and 2.0

MoreLess

Features

Wide supply voltage range from 2.3 V to 3.6 V
Switch voltage accepts signals up to 5.5 V
1.8 V control logic at V_CC = 3.6 V
Low-power mode when OE is HIGH (2 µA maximum)
6 Ω (maximum) ON resistance
0.1 Ω (typical) ON resistance mismatch between channels
6 pF (typical) ON-state capacitance
High bandwidth (1.0 GHz typical)
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
ESD protection:
- HBM JESD22-A114F Class 3A exceeds 8000 V
- CDM JESD22-C101E exceeds 1000 V
- HBM exceeds 12000 V for I/O to GND protection
Specified from -40 °C to +85 °C

Target Applications

Routes signals for USB 1.0, 1.1 and 2.0

Data Sheets

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Sample

NX3DV221 Block Diagram

sot650-2_3d

NX3DV221 Block Diagram
sot650-2_3d

NX3DV221 Block Diagram

sot650-2_3d

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