Advanced IGBT/SiC Gate Driver with Adjustable Dynamic Gate Strength

  • Preproduction
  • This page contains information on a preproduction product. Specifications and information herein are subject to change without notice. For additional information contact support or your sales representative.

Roll over image to zoom in

Product Details

Select a section:

Block Diagram

GD3162 Block Diagram

GD3162 Block Diagram

Features

Operation

  • Integrated boost capability for increased drive strength: Up to 10 / 20 / 30 A source/sink current
  • Max VCC output voltage: 25 V
  • Programmable ADC delay – Up to 8 μs sampling delay from rising or falling edge of PWM

Protection

  • Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
  • Fast VCE DeSat detection and reaction time: < 1 µs (SiC)
  • Improved PWM deadtime range for reduced switching losses (SiC)
  • Programmable two-level turn off (2LTO) and soft-shutdown (SSD)
  • Provides either MCU controlled or safety logic controlled gate drive to actively discharge the DC link capacitor

Functional Safety

  • Additional programmable fault pin (INTA)
  • Integrated HV fault management (FSISO)
  • Programmable VCE output monitoring

Insulation/Isolation

  • Minimum common mode transient immunity (CMTI) > 100 V/ns
  • 5,000 Vrms galvanic isolation per UL1577 (planned)

Design Resources

Documentation

Quick reference to our documentation types.

1 documents

Design Files

Hardware

1 hardware offering

Software

Support

What do you need help with?