Documentation
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5 documents
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Package Information
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins
100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier
MW7IC008N Receive alerts
The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats.
RF ISO PQFN8x8 1894 Plastic
Product Details
Features
- Broadband, Single Matching Network from 20 to 1000 MHz
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.
Key Parametrics
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- Frequency (Min) (MHz)
- 100
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- Frequency (Max) (MHz)
- 1000
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- Supply Voltage (Typ) (V)
- 28
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- Die Technology
- LDMOS
RF Performance Table
100-900 MHz
Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA| Frequency | Gps (dB) |
PAE (%) |
| 100 MHz @ 11 W CW | 23.5 | 55 |
| 400 MHz @ 9 W CW | 22.5 | 41 |
| 900 MHz @ 6.5 W CW | 23.5 | 34 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)
- Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz
- Typical Pout @ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz
Design Resources
Design Files
4 design files
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Models
MW7IC008NT1 RF High-Power Model AWR Product Model Design Kit
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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.
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Models
MW7IC008N RF High-Power Model ADS Product Model Design Kit
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Printed Circuit Boards and Schematics
MW7IC008NT1 CAD DXF File