100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier

MW7IC008N

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Product Details

Features

  • Broadband, Single Matching Network from 20 to 1000 MHz
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    1000
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Table

100-900 MHz

Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA
Frequency Gps
(dB)
PAE
(%)
100 MHz @ 11 W CW23.555
400 MHz @ 9 W CW22.541
900 MHz @ 6.5 W CW23.534
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz
  • Typical Pout @ 1 dB Compression Point 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz

Design Resources

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Documentation

Quick reference to our documentation types.

5 documents

Design Files

4 design files

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