Design Files
2 design files
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Models
A3G26D055N Peaking Class C S-Parameters
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Models
A3G26D055N Carrier Class AB S-Parameters
100-2690 MHz, 8 W Avg., 48 V Airfast® RF Power GaN Transistor
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This A3G26D055N 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100–2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
DFN 7 x 6.5 Package Image
Product Details
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity analog or digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHs compliant
RF Performance Table
2600 MHz
Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 40 mA, VGSB = –4.9 Vdc, Pout = 8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2515 MHz | 18.0 | 52.1 | 8.3 | -27.4 |
| 2595 MHz | 18.2 | 53.5 | 8.2 | -28.2 |
| 2675 MHz | 18.0 | 54.1 | 8.1 | -30.1 |
700 MHz
Typical Class AB Side A (top side) W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 40 mA, Pout = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
P3dB (dBm) |
ACPR (dBc) |
| 750 MHz | 20.0 | 41.7 | 7.0 | 44.5 | -34.4 |
| 780 MHz | 19.7 | 41.1 | 7.0 | 44.5 | -34.3 |
| 810 MHz | 19.2 | 40.6 | 7.0 | 44.5 | -36.6 |