575-960 MHz, 4 W Avg., 48 V Airfast® Wideband Integrated RF LDMOS Amplifier

A2I09VD030N
The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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Product Details

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Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    575
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    46.1
  • Peak Power (Typ) (W)
    40.5
  • Die Technology
    LDMOS

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
920 MHz34.419.9–45.0
940 MHz34.520.0–44.6
960 MHz34.319.8–44.3

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
728 MHz30.919.6–44.7
748 MHz31.119.5–45.5
768 MHz31.219.3–46.2

Documentation

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Design Files

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