575-960 MHz, 4 W Avg., 48 V Airfast® Wideband Integrated RF LDMOS Amplifier
A2I09VD030N Receive alerts
The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
TO-270WB-15, TO-270WBG-15 Package Image
Product Details
Features
- On-chip matching (50 ohm input, DC blocked)
- Integrated quiescent current temperature compensation with enable/disable function
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 575
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- Frequency (Max) (MHz)
- 960
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 46.1
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- Peak Power (Typ) (W)
- 40.5
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- Die Technology
- LDMOS
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 920 MHz | 34.4 | 19.9 | –45.0 |
| 940 MHz | 34.5 | 20.0 | –44.6 |
| 960 MHz | 34.3 | 19.8 | –44.3 |
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 728 MHz | 30.9 | 19.6 | –44.7 |
| 748 MHz | 31.1 | 19.5 | –45.5 |
| 768 MHz | 31.2 | 19.3 | –46.2 |
Design Resources
Design Files
1-5 of 7 design files
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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.
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Models
A2I09VD030N RF High-Power Model AWR Product Model Design Kit
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Models
A2I09VD030N, A2I09VD030GN S-Parameters
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Models
A2I09VD030N RF High-Power Model ADS Product Model Design Kit