850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

MD8IC970N
The MD8IC970NR1 and MD8IC970GNR1 wideband integrated circuits are designed with on-chip prematching that make them usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. These devices have a 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency sub-band.

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Product Details

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Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Prematching. On-Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    850
  • Frequency (Max) (MHz)
    940
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Table

850-940 MHz

Typical Two-Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency Gps
(dB)		 PAE
(%)		 IMD
(dBc)
850 MHz30.640.1–30.5
900 MHz31.942.4–31.0
940 MHz32.642.1–31.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point ≃ 79 Watts CW

Design Resources

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Documentation

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