100-2690 MHz, 8 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26D055N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity analog or digital linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHs compliant

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    47.4
  • Peak Power (Typ) (W)
    55
  • Die Technology
    GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 40 mA, VGSB = –4.9 Vdc, Pout = 8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2515 MHz18.052.18.3-27.4
2595 MHz18.253.58.2-28.2
2675 MHz18.054.18.1-30.1
1. All data measured in reference circuit with device soldered to printed circuit board.

700 MHz

Typical Class AB Side A (top side) W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 40 mA, Pout = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
P3dB
(dBm)
ACPR
(dBc)
750 MHz20.041.77.044.5-34.4
780 MHz19.741.17.044.5-34.3
810 MHz19.240.67.044.5-36.6
1. All data measured in reference circuit with device soldered to printed circuit board.

Design Resources

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Documentation

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3 documents

Design Files

2 design files

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