3400-4000 MHz, 5.4 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G38H045N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity analog or digital linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    3400
  • Frequency (Max) (MHz)
    4000
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    46.8
  • Peak Power (Typ) (W)
    48
  • Die Technology
    GaN

RF Performance Table

3700-3980 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 35 mA, VGSB = –4.2 Vdc, Pout = 5.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
3700 MHz15.552.08.0-29.1
3840 MHz14.950.88.4-30.7
3980 MHz14.250.38.7-32.3
1. All data measured in reference circuit with device soldered to printed circuit board.

Design Resources

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Documentation

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4 documents

Design Files

3 design files

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